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Refereed Publications (Total citations: >11,000, h-factor: 64, Google Scholar)
2023
195. Density functional theory calculations of mechanical and electronic properties of W1−xTaxN6, W1−xMoxN6, and Mo1−xTaxN6 (0 ≤ x ≤ 1) alloys in a hexagonal structure, S. R. Kandel, D. Gall, S. V. Khare, J. Vac. Sci. Technol. A 41, 063112 (2023). pdf doi
194. Resistivity size effect in epitaxial VNi2 layers, Minghua Zhang and Daniel Gall, J. Appl. Phys. 134, 105302 (2023). pdf doi
193. Anisotropic resistivity size effect in epitaxial Mo(001) and Mo(011) layers, A. Jog, P. Zheng, T. Zhou, D. Gall, Nanomaterials 13, 957 (2023). pdf doi
192. Mechanical and electronic properties of transition metal hexanitrides in hexagonal structure from density functional theory calculations, S. R. Kandel, B. B. Dumre, D. Gall, S. V. Khare, Comp. Mat. Sci. 221, 112084 (2023). pdf doi
191. Resistivity scaling in CuTi determined from transport measurements and first-principles simulations, Minghua Zhang, Sushant Kumar, Ravishankar Sundararaman, and Daniel Gall, J. Appl. Phys. 133, 045102 (2023). pdf doi
2022
190. Ultrathin ruthenium films on graphene buffered SiO2 via quasi van der Waals epitaxy, Z. Lu, L. Zhang, X. Wen, A. Jog, K. Kisslinger, L. Gao, J. Shi, D. Gall, M. Washington, G.-C. Wang, T.-M. Lu, ACS Appl. Elec. Mat. 4, 5775 (2022). doi
189. Investigation of hardness in transition metal hexa-nitrides in cubic structure: A first-principles study, S. R. Kandel, B. B. Dumre, D. Gall, S. V. Khare, J. Phys. Chem. Solids 171, 111022 (2022). pdf doi
188. Searching for Circular Photo Galvanic Effect in Oxyhalide Perovskite Bi4NbO8Cl, Z. Chen, R. Xu, S. Ma, Y. Ma, Y. Hu, L. Zhang, Y. Guo, Z. Huang, B. Wang, Y-Y Sun, J. Jiang, R. Hawks, R. Jia, Y. Xiang, G-Ch. Wang, E. A. Wertz, J. Tian, D. Gall, X. Chen, V. Wang, L. Gao, H. Zhu, and J. Shi, Adv. Funct. Mater. 2206343 (2022). doi
187. Dominant Energy Carrier Transitions and Thermal Anisotropy in Epitaxial Iridium Thin Films, C. Perez, A. Jog, H. Kwon, D. Gall, M. Asheghi, S. Kumar, W. Park, K.E. Goodson, Adv. Funct. Mater. 2207781 (2022). doi
186. Prediction of super hardness in transition metal hexa-nitrides from density functional theory computations, S. R. Kandel, B. B. Dumre, D. Gall, S. V. Khare, Materialia 25, 101550 (2022). pdf doi
185. Ultralow electron-surface scattering in nanoscale metals leveraging Fermi surface anisotropy, Sushant Kumar, Christian Multunas, Benjamin Defay, Daniel Gall and Ravishankar Sundararaman, Phys. Rev. Mat. 6, 085002 (2022). pdf doi
184. Giant pyroelectricity in nanomembranes, J. Jiang, L. Zhang, C. Ming, H. Zhou, P. Bose, Y. Guo, Y. Hu, B. Wang, Z. Chen, R. Jia, S. Pendse, Y. Xiang, Y. Xia, Z. Lu, X. Wen, Y. Cai, C. Sun, G.-C. Wang, T.-M. Lu, D. Gall, Y.-Y. Sun, N. Koratkar, E. Fohtung, Y. Shi, and J. Shi, Nature 607, 480 (2022). doi
183. In situ high-temperature TEM observation of Inconel corrosion by molten chloride salts with N2, O2, H2O, Prachi Pragnya, Daniel Gall, Robert Hull, J. Electrochem. Soc. 169, 093504 (2022). pdf doi
182. Resistivity scaling in epitaxial CuAl2(001) layers, Minghua Zhang and Daniel Gall, IEEE Trans. Electron Devices 69, 5110 (2022). pdf doi
181. Electron scattering at surfaces and grain boundaries in Rh layers, Atharv Jog and Daniel Gall, IEEE Trans. Electron Devices 69, 3854 (2022). pdf doi
180. First-principles prediction of electron grain boundary scattering in fcc metals, Tianji Zhou, Atharv Jog, and Daniel Gall, Appl. Phys. Lett. 120, 241603 (2022). pdf doi
179. Effect of electronegativity on electron surface scattering in thin metal layers, Atharv Jog, Erik Milosevic, Pengyuan Zheng, and Daniel Gall, Appl. Phys. Lett. 120, 041601 (2022). pdf doi
178. Epitaxial TiCx(001) layers: Phase formation and physical properties vs C-to-Ti ratio, Peijiao Fang, C. P. Mulligan, Ru Jia, Jian Shi, S. V. Khare, Daniel Gall, Acta Mater. 226, 117643 (2022). pdf doi
177. Correlating structure and orbital occupation with the stability and mechanical properties of 3d transition metal carbides, I. Khatri, N. J. Szymanski, B.B. Dumre, J. G. Amar, D. Gall, S. V. Khare, J. Alloys Compd. 891, 161866 (2022). pdf doi
2021
176. Materials for Interconnects, Daniel Gall, Judy J. Cha, Zhihong Chen, Hyeuk-Jin Han, Christopher Hinkle, Joshua A. Robinson, Ravishankar Sundararaman, Riccardo Torsi, (invited article) MRS Bulletin 46, 959 (2021). pdf doi
175. Resistivity size effect in epitaxial iridium layers, Atharv Jog and Daniel Gall, J. Appl. Phys. 130, 115103 (2021). pdf doi
174. Van der Waals Epitaxy and Remote Epitaxy of LiNbO3 Thin Films by Pulsed Laser Deposition, Ru Jia, Hyun S. Kum, Xin Sun, Yuwei Guo, Baiwei Wang, Peijiao Fang, Jie Jiang, Daniel Gall, Toh-Ming Lu, Morris Washington, Jeehwan Kim, Jian Shi, J. Vac. Sci. Technol. A 39, 040405 (2021). pdf doi
173. Resistivity scaling in epitaxial MAX-phase Ti4SiC3(0001) layers, Minghua Zhang, Sushant Kumar, Ravishankar Sundararaman and Daniel Gall, J. Appl. Phys. 130, 034302 (2021). pdf doi
172. Epitaxial MoCx: competition between cubic d-MoCy(111) and hexagonal b-Mo2C(0001), Peijiao Fang, Baiwei Wang, and Daniel Gall, Surf. Coat. Technol. 420, 127333 (2021). pdf doi
171. In situ transmission electron microscopy of high-temperature Inconel-625 corrosion by molten chloride salts, Prachi Pragnya, Daniel Gall, Robert Hull, J. Electrochem. Soc. 168, 051507 (2021). pdf doi
170. Tunable infrared plasmonic properties of epitaxial Ti1−xMgxN(001) layers, Baiwei Wang, Poomirat Nawarat, Kim M. Lewis, Panos Patsalas, Daniel Gall, ACS Appl. Mater. Interfaces 13, 22738 (2021). pdf doi
169. Stability, and electronic and optical properties of ternary nitride phases of MgSnN2: A first- principles study, B. B. Dumre, D. Gall, and S. V. Khare, J. Phys. Chem. Solids 153, 110011 (2021). pdf doi
168. Interdiffusion Reliability and Resistivity Scaling of Intermetallic Compounds as Advanced Interconnect Materials, L. Chen, S. Kumar, M. Yahagi, D. Ando, Y. Sutou, D. Gall, R. Sundararaman, and J. Koike, J. Appl. Phys. 129, 035301 (2021). pdf doi
167. Resistivity size effect in epitaxial Rh(001) and Rh(111) layers, Atharv Jog, Tianji Zhou, and Daniel Gall, IEEE Trans. Electron Devices 68, 257 (2021). pdf doi
166. Epitaxial growth of cubic WCy(001) on MgO(001), P. Fang, B. Wang, C. P. Mulligan, T. M. Murray, S. V. Khare, D. Gall, J. Alloys Compd. 860, 158403 (2021). pdf doi
2020
165. Mary E. McGahay, Sanjay V. Khare, and Daniel Gall, "Metal-insulator transitions in epitaxial rocksalt-structure Cr1-x/2N1-xOx(001)," Phys. Rev. B 102, 235102 (2020). pdf doi
164. Y.R. Koh, J. Shi, B. Wang, R. Hu, H. Ahmad, S. Kerdsongpanya, E. Milosevic, W.A. Doolittle, D. Gall, Z. Tian, S. Graham, and P.E. Hopkins, "Thermal boundary conductance across epitaxial metal/sapphire interfaces," Phys. Rev. B 102, 205304 (2020). pdf doi
163. Baiwei Wang, Minghua Zhang, Vijaya Adhikari, Peijiao Fang, Sanjay V. Khare, Daniel Gall, "Bandgap and strain engineering in epitaxial-rocksalt structure (Ti0.5Mg0.5)1−xAlxN(001) semiconductors," J. Mater. Chem. C 8, 12677 (2020). pdf doi
162. K. Barmak, K. Sentosun, A. Zangiabadi, E. Milosevic, D. Gall, M. Zecevic, R.A. Lebensohn, J.A. Floro, "Defects in epitaxial Ru(0001) on Al2O3(0001): Dislocations, Stacking Faults and Deformation Twins," J. Appl. Phys. 128, 045304 (2020). pdf doi
161. M. Gioti, J. Arvanitidis, D. Christofilos, K. Chaudhuri, T. Zorba, G. Abadias, D. Gall, V.Μ. Shalaev, A. Boltasseva, P. Patsalas, "Plasmonic and Phononic Properties of Epitaxial Conductive Transition Metal Nitrides," J. Opt. 22, 084001 (2020). doi
160. I. S. Khare, N. J. Szymanski, D. Gall, R. E. Irving, "Electronic, optical and thermoelectric properties of sodium pnictogen chalcogenides: A first principles study," Comp. Mat. Sci. 183, 109818 (2020). doi
159. Mary E. McGahay, Baiwei Wang, Jian Shi and Daniel Gall, "Band gap and electron transport in epitaxial cubic Cr1-xAlxN(001)," Phys. Rev. B 101, 205206 (2020). pdf doi
158. Baiwei Wang, Kiumars Aryana, John T. Gaskins, Patrick E. Hopkins, Sanjay V. Khare, and Daniel Gall, "Structural stabilization and piezoelectric enhancement in epitaxial (Ti1−xMgx)0.25Al0.75N(0001) layers," Adv. Funct. Mater. 30, 2001915 (2020). pdf doi
157. Erik Milosevic and Daniel Gall, "Electron scattering at Co(0001) surfaces: Effects of Ti and TiN capping layers," AIP Advances 10, 055213 (2020). pdf doi
156. Katayun Barmak, Sameer Ezzat, Ryan Gusley, Atharv Jog, Sit Kerdsongpanya, Asim Khanya, Erik Milosevic, William Richardson, Kadir Sentosun, Amirali Zangiabadi, Daniel Gall, William E. Kaden, Eduardo R. Mucciolo, Patrick K. Schelling, Alan C. West, Kevin R. Coffey, "Epitaxial metals for interconnects beyond Cu," (Editor's pick: Featured Article) J. Vac. Sci. Technol. A 38, 033406 (2020). doi
155. Y. Hu, F. Florio, Z. Chen, W. A. Phelan, M. A. Siegler, Z. Zhou, Y. Guo, R. Hawks, J. Jiang, J. Feng, L. Zhang, B. Wang, Y. Wang, D. Gall, E. F. Palermo, Z. Lu, X. Sun, T.-M. Lu, H. Zhou, Y. Ren, E. Wertz, R. Sundararaman, J. Shi, "A Chiral Switchable Photovoltaic Ferroelectric 1D Perovskite," Sci. Adv. 9, eaay4213 (2020). doi
154. Daniel Gall, "The search for the most conductive metal for narrow interconnect lines," (invited perspectives article; also: Editor's pick: "Featured Article") J. Appl. Phys. 127, 050901 (2020). pdf doi
153. Y. Guo, X. Sun, J. Jiang, B. Wang, X. Chen, X. Yin, W. Qi, L. Gao, L. Zhang, Z. Lu, R. Jia, S. Pendse, Y. Hu, Z. Chen, E. Wertz, D. Gall, J. Feng, T.-M. Lu, J. Shi, "A reconfigurable remotely epitaxial VO2 electrical heterostructure," Nano Lett. 20, 33 (2020). doi
2019
152. B. B. Dumre, N. J. Szymanski, V. Adhikari, I. Khatri, D. Gall, and S. V. Khare, "Improved optoelectronic properties in CdSexTe1-x through controlled composition and short-range order," Solar Energy 194, 742 (2019). pdf doi
151. P. Pragnya, A. Pinkowitz, R. Hull, and D. Gall, "Electrochemical memristive devices based on submonolayer metal deposition," APL Mater. 7, 101121 (2019). pdf doi
150. N. J. Szymanski, I. Khatri, J. G. Amar, D. Gall, and S. V. Khare, " Unconventional superconductivity in 3d rocksalt transition metal carbides," J. Mater. Chem. C 7, 12619 (2019). pdf doi
149. J. Jiang, X. Sun, X. Chen, B. Wang, Z. Chen, Y. Hu, Y. Guo, L. Zhang, Y. Ma, L. Gao, F. Zheng, L. Jin, M. Chen, Z. Ma, Y. Zhou, N. Padture, K. Beach, H. Terrones, Y. Shi, D. Gall, T-M. Lu, E. Wertz, J. Feng, and J. Shi, "Carrier Lifetime Enhancement in Halide Perovskite via Remote Epitaxy," Nat. Comm. 10, 4145 (2019). doi
148. N. J. Szymanski, V. Adhikari, M. A. Willard, P. Sarin, D. Gall, and S. V. Khare, "Prediction of improved magnetization and stability in Fe16N2 through alloying," J. Appl. Phys. 126, 093903 (2019). pdf doi
147. Erik Milosevic, Pengyuan Zheng, and Daniel Gall, "Electron Scattering at Epitaxial Ni(001) Surfaces," IEEE Trans. Electron Devices 66, 4326 (2019). pdf doi
146. S. Kassavetis, B.D. Ozsdolay, N. Kalfagiannis, A. Habib, J.-H. Tortai, S. Kerdsongpanya, R. Sundararaman, M. Stchakovsky, D.V. Bellas, D. Gall, and P. Patsalas, "Near-zero negative real permittivity in far ultraviolet: Extending plasmonics and photonics with B1-MoNx," J. Phys. Chem. C. 123, 21120 (2019). pdf doi
145. V. Adhikari, N. J. Szymanski, I. Khatri, D. Gall, S. V. Khare, "First principles investigation into the phase stability and enhanced hardness of TiN-ScN and TiN-YN alloys," Thin Solid Films 688, 137284 (2019). pdf doi
144. Erik Milosevic, Sit Kerdsongpanya, Mary E. McGahay, Baiwei Wang, Daniel Gall, "The Resistivity Size Effect in Epitaxial Nb(001) and Nb(011) Layers," IEEE Trans. Electron Devices 66, 3473 (2019). pdf doi
143. Erik Milosevic, Sit Kerdsongpanya, Mary E. McGahay, Amirali Zangiabadi, Katayun Barmak, Daniel Gall, "Resistivity scaling in epitaxial Co(0001) layers," J. Appl. Phys. 125, 245105 (2019). pdf doi
142. Sameer S. Ezzat, Prabhu Doss Mani, Asim Khaniya, William Kaden, Daniel Gall, Katayun Barmak, and Kevin R. Coffey, "Resistivity and surface scattering of (0001) single crystal ruthenium thin films" J. Vac. Sci. Technol. A 37, 031516 (2019)). pdf doi
141. Erik Milosevic and Daniel Gall, "Copper Interconnects: Surface State Engineering to Facilitate Specular Electron Scattering," IEEE Trans. Electron Devices 66, 2692 (2019). pdf doi
140. Mary E. McGahay and Daniel Gall, "Conductive surface oxide on CrN(001) layers," Appl. Phys. Lett. 114, 131602 (2019). pdf doi
139. Baiwei Wang and Daniel Gall, "Fully strained epitaxial Ti1−xMgxN(001) layers," Thin Solid Films, 688, 137165 (2019). pdf doi
2018
138. Linghan Chen, Daisuke Ando, Yuji Sutou, Daniel Gall, Junichi Koike, "NiAl as a Potential Material for Liner- and Barrier-Free Interconnect in Ultrasmall Technology Node," Appl. Phys. Lett. 113, 183503 (2018). pdf doi
137. Erik Milosevic, Sit Kerdsongpanya, Amirali Zangiabadi, Katayun Barmak, Kevin R. Coffey, Daniel Gall, "Resistivity Size Effect in Epitaxial Ru(0001) Layers," J. Appl. Phys. 124, 165105 (2018). pdf doi
136. N. J. Szymanski, L. N. Walters, O. Hellman, D. Gall and S. V. Khare, "Dynamical stabilization in delafossite nitrides for solar energy conversion," J. Mater. Chem. A 6, 20852 (2018). pdf doi
135. Baiwei Wang, Sit Kerdsongpanya, Mary E. McGahay, Erik Milosevic, Panos Patsalas, and Daniel Gall, "Growth and properties of epitaxial Ti1−xMgxN(001) layers" J. Vac. Sci. Technol. A 36, 061501 (2018). pdf doi
134. Karthik Balasubramanian, Sanjay V. Khare and Daniel Gall, "Energetics of point defects in rocksalt structure transition metal nitrides: physical origin for deviations from stoichiometry" Acta Mater. 159, 77 (2018). pdf doi
133. Tianji Zhou, Nicholas A. Lanzillo, Prasad Bhosale, Daniel Gall, and Roger Quon, "A first-principles analysis of ballistic conductance, grain boundary scattering and vertical resistance in aluminum interconnects," AIP Advances 8, 055127 (2018). pdf doi
132. V. Adhikari, Z.T.Y. Liu, N.J. Szymanski, I. Khatri, D. Gall, P. Sarin, S.V. Khare, "First-principles study of mechanical and magnetic properties of transition metal (M) nitrides in the cubic M4N structure" J. Phys. Chem. Solids 120, 197 (2018). doi
131. Karthik Balasubramanian, Sanjay V. Khare and Daniel Gall, "Valence electron concentration as an indicator for mechanical properties in rocksalt structure nitrides, carbides and carbonitrides," Acta Mater. 152, 175 (2018). pdf doi supplementary material
130. T. Zhou and D. Gall, "Resistivity scaling due to electron surface scattering in thin metal layers," Phys. Rev. B 97, 165406 (2018). pdf doi
129. T. Zhou, P.Y. Zheng, Sumeet C. Pandey, Ravishankar Sundararaman, and D. Gall, "The electrical resistivity of rough thin films: A model based on electron reflection at discrete step edges," J. Appl. Phys. 123, 155107 (2018). pdf doi
2017
128. Karthik Balasubramanian, Liping Huang and Daniel Gall, "Phase stability and mechanical properties of Mo1-xNx with 0 ≤ x ≤ 1," J. Appl. Phys. 122, 195101 (2017). pdf doi supplementary material
127. P.Y. Zheng, T. Zhou, B.J. Engler, J.S. Chawla, R. Hull and D. Gall, "Surface roughness dependence of the electrical resistivity of W(001) layers," J. Appl. Phys. 122, 095304 (2017). pdf doi
126. B. D. Ozsdolay, X. Shen, K. Balasubramanian, G. Scannell, L. Huang, M. Yamaguchi, and D. Gall, "Elastic constants of epitaxial cubic MoNx(001) layers," Surf. Coat. Technol. 325, 572 (2017). pdf doi
125. Chryssoula Metaxa, Spyros Kassavetis, Jean Francois Pierson, Daniel Gall, Panos Patsalas, "Infrared plasmonics with conductive ternary nitrides," ACS Appl. Mater. Interfaces 9, 10825 (2017). doi
124. C. Metaxa, B. D. Ozsdolay, T. Zorba, K. Paraskevopoulos, D. Gall, and P. Patsalas "Electronic and optical properties of rocksalt-phase tungsten nitride (B1-WN)," J. Vac. Sci. Technol. A 35, 031501 (2017). pdf doi
123. Pengyuan Zheng and Daniel Gall, "The anisotropic size effect of the electrical resistivity of metal thin films: Tungsten," J. Appl. Phys. 122, 135301 (2017). pdf doi
122. B. D. Ozsdolay, K. Balasubramanian, and D. Gall, "Cation and anion vacancies in cubic molybdenum nitride," J. Alloys Compd. 705, 631 (2017). pdf doi
121. Z. T. Y. Liu, B. P. Burton, S. V. Khare, and D. Gall, "First-principles phase diagram calculations for the rocksalt-structure quasibinary systems TiN-ZrN, TiN-HfN and ZrN-HfN," J. Phys: Cond. Mat. 29, 035401 (2017). pdf doi
2016
120. Karthik Balasubramanian, Sanjay Khare and Daniel Gall, "Vacancy induced mechanical stabilization of cubic tungsten nitride," Phys. Rev. B 94, 174111 (2016). pdf doi
119. B. D. Ozsdolay, C. P. Mulligan, K. Balasubramanian, Liping Huang, S. V. Khare, and D. Gall, "Cubic β-WNx layers: growth and properties vs N-to-W ratio," Surf. Coat. Technol. 304, 98 (2016). pdf doi
118. Mathieu Cesar, Daniel Gall, and Hong Guo, "Reducing the Grain Boundary Resistivity of Copper by Doping," Phys. Rev. Appl. 5, 054018 (2016). pdf doi
117. P.Y. Zheng, T. Zhou, and D. Gall, "Electron channeling in TiO2 coated Cu layers," Semiconductor Sci. Technol. 31, 055005 (2016). pdf doi
116. D. Gall, "Electron mean free path in elemental metals," J. Appl. Phys. 119, 085101 (2016). pdf doi
115. K. Zhang, K. Balasubramanian, B.D. Ozsdolay, C.P. Mulligan, S.V. Khare, W.T. Zheng, and D. Gall, "Growth and mechanical properties of epitaxial NbN(001) films on MgO(001)," Surf. Coat. Technol. 288, 105 (2016). pdf doi
2015
114. B. D. Ozsdolay, C. P. Mulligan, M. Guerette, L. Huang, and D. Gall, "Epitaxial growth and properties of cubic WN on MgO(001), MgO(111), and Al2O3(0001)," Thin Solid Films, 590, 276 (2015). pdf doi
113. P. C. Jamison, Takaaki Tsunoda, T. Vo, J. Li, H. Jagannathan, S. R. Shinde, V. K. Paruchuri, D. Gall, "SiO2 Free HfO2 Gate Dielectrics by Physical Vapor Deposition," IEEE Trans. Electron Devices, 62, 2878 (2015). pdf doi
112. K. Zhang, K. Balasubramanian, B.D. Ozsdolay, C.P. Mulligan, S.V. Khare, W.T. Zheng, and D. Gall, "Epitaxial NbCxN1-x(001) layers: Growth, mechanical properties, and electrical resistivity," Surf. Coat. Technol. 277, 136 (2015). pdf doi
111. R.P. Deng, P.Y. Zheng, and D. Gall, "Optical and electron transport properties of rock-salt Al1-xScxN," J. Appl. Phys. 118, 015706 (2015). pdf doi
110. C.P. Mulligan, R. Wei, G. Yang, P. Zheng, R. Deng, D. Gall, "Microstructure and age hardening of C276 alloy coatings," Surf. Coat. Technol. 270, 299 (2015). pdf doi
109. P.Y. Zheng, B. D. Ozsdolay, and D. Gall, "Epitaxial Growth of Tungsten Layers on MgO(001)," J. Vac. Sci. Technol. A 33, 061505 (2015). pdf doi
108. R.P. Deng, B. Ozsdolay, P.Y. Zheng, S.V. Khare, and D. Gall, "Optical and transport measurement and first-principles determination of the ScN band gap," Phys. Rev. B 90, 045104 (2015). pdf doi
2014
107. Z. T. Y. Liu, D. Gall and S. V. Khare, "Electronic and bonding analysis of hardness in pyrite-type transition metal pernitrides," Phys. Rev. B 90, 134102 (2014). pdf doi
106. Pengyuan Zheng, R.P. Deng, and D. Gall, "Ni Doping on Cu Surfaces: Reduced Copper Resistivity," Appl. Phys. Lett. 105, 131603 (2014). pdf doi
105. Mathieu Cesar, Dongping Liu, Daniel Gall, and Hong Guo, "Calculated Resistances of Single Grain Boundaries in Copper," Phys. Rev. Appl. 2, 044007 (2014). pdf doi
104. Kan Zhang, M. Wen, S. Wang, R.P. Deng, D. Gall, and W.T. Zheng, "Sputter Deposited NbCxNy films: Effect of Nitrogen Content on Structure and Mechanical and Tribological Properties," Surf. Coat. Technol. 258, 746 (2014). doi
103. X. Zhou, D. Gall and S. V. Khare, "Mechanical properties and electronic structure of anti-ReO3 structured cubic nitrides, M3N, of d block transition metals M: an ab initio study," J. Alloys Comp. 595, 80 (2014). doi
102. Z. T. Y. Liu, X. Zhou, D. Gall and S. V. Khare, "First-principles investigation of the structural, mechanical and electronic properties of the NbO-structured 3d, 4d and 5d transition metal nitrides," Comp. Mat. Sci. 84, 365 (2014). doi
101. R.P. Deng, K. Jiang, and D. Gall, "Optical Phonon Modes in Al1-xScxN," J. Appl. Phys. 115, 013506 (2014). pdf doi
100. Z. T. Y. Liu, X. Zhou, S. V. Khare and D. Gall, "Structural, mechanical and electronic properties of 3d transition metal nitrides in cubic zincblende, rocksalt and cesium chloride structures: a first-principles investigation," J. Phys.: Cond. Mat. 26, 025404 (2014). doi
2013
99. R.P. Deng, S.R. Evans, and D. Gall, "Bandgap in Al1-xScxN," Appl. Phys. Lett. 102, 112103 (2013). pdf doi
98. J. S. Chawla, X.Y. Zhang and D. Gall, "Effective Electron Mean Free Path in TiN(001)," J. Appl. Phys. 113, 063704 (2013). pdf doi
97. S. Mukherjee and D. Gall, "Structure Zone Model for Extreme Shadowing Conditions," Thin Solid Films, 527, 158 (2013). doi
2012
96. P.A. Papi, C.P. Mulligan, and D. Gall, "CrN-Ag Nanocomposite Coatings: Control of Lubricant Transport by Diffusion Barriers," Thin Solid Films, 524, 211 (2012). doi
95. C.P. Mulligan, P.A. Papi, and D. Gall, "Ag transport in CrN-Ag nanocomposite coatings," Thin Solid Films 520, 6774 (2012). doi
94. R.P. Deng, P. Muralt, and D. Gall, "Bi-axial texture development in AlN layers during off-axis sputter deposition," J. Vac. Sci. Tech. A, 30, 051501 (2012). pdf doi
93. J.S. Chawla and D. Gall, "Epitaxial Ag(001) grown on MgO(001) and TiN(001): Twinning, surface morphology, and electron surface scattering," J. Appl. Phys. 111, 043708 (2011). pdf doi
2011
92. J. S. Chawla, F. Gstrein, K. P. O'Brien, J. S. Clarke, and D. Gall, "Electron scattering at surfaces and grain boundaries in Cu thin films and wires," Phys. Rev. B, 84, 235423 (2011). pdf doi
91. J.S. Chawla, X. Y. Zhang and D. Gall, "Epitaxial TiN(001) wetting layer for growth of thin single-crystal Cu(001)," J. Appl. Phys. 110, 043714 (2011). pdf doi
90. X. Y. Zhang, J. S. Chawla, R. P. Deng, and D. Gall, "Epitaxial suppression of the metal-insulator transition in CrN," Phys. Rev. B, 84, 073101 (2011). pdf doi
89. X.Y. Zhang, J.S. Chawla, B.M. Howe, D. Gall, "Variable-range hopping conduction in epitaxial CrN(001)," Phys. Rev. B, 83, 165205 (2011). pdf doi
2010
88. S. Cazottes, Z.L. Zhang, R. Daniel, J.S. Chawla, D. Gall, G. Dehm, "Structural characterization of a Cu/MgO(001) interface using CS-corrected HRTEM," Thin Solid Films 519, 1662 (2010). doi
87. C.P. Mulligan, T.A. Blanchet, and D. Gall, "Control of lubricant transport by a CrN diffusion barrier layer during high-temperature sliding of a CrN-Ag composite coating," Surf. Coat. Technol. 205, 1350 (2010). doi
86. J. S. Chawla, F. Zahid, H. Guo, and D. Gall, "Effect of O2 adsorption on electron scattering at Cu(001) surfaces," Appl. Phys. Lett. 97, 132106 (2010). pdf doi
85. X.Y. Zhang and D. Gall, "CrN electronic structure and vibrational modes: an optical analysis," Phys. Rev. B 82, 045116 (2010). pdf doi
84. C.P. Mulligan, T.A. Blanchet, and D. Gall, "CrN-Ag nanocomposite coatings: High temperature tribological response." Wear 269, 125 (2010). doi
83. S. Mukherjee and D. Gall, "Power law scaling during physical vapor deposition under extreme shadowing," J. Appl. Phys. 107, 084301 (2010). pdf doi
82. F. Zahid, Y. Ke, D. Gall, and H. Guo "Resistivity of thin Cu films coated with Ta, Ti, Ru, Al, and Pd barrier layers from first principles," Phys. Rev. B 81, 045406 (2010). pdf doi
81. M.D. Gasda, G.A. Eisman, and D. Gall, "Nanorod PEM Fuel Cell Cathodes with Controlled Porosity," J. Electrochem. Soc. 157, B437 (2010); also featured in: Virt. J. Nanoscale Sci. Tech. 21, 7 (2010). pdf doi
80. X.Y. Zhang and D. Gall, "Surface Mound Formation during Epitaxial Growth of CrN(001)," Thin Solid Films 518, 3813 (2010). doi
79. S. V. Kesapragada, T-J. Yim, J. S. Dordick, R.S. Kane, and D. Gall, "Selective assembly of multi-component nanosprings and nanorods," J. Nanosci. Nanotechnol. 10, 2252 (2010). doi
78. C.P. Mulligan, T.A. Blanchet, and D. Gall, "CrN-Ag nanocomposite coatings: Tribology at room temperature and during a temperature ramp," Surf. Coat. Technol. 204, 1388 (2010). doi
77. M.D. Gasda, G.A. Eisman, and D. Gall, "Sputter-Deposited Pt/CrN Nanoparticle PEM Fuel Cell Cathodes: Limited Proton Conductivity through Electrode Dewetting," J. Electrochem. Soc. 156, B71 (2010). pdf doi
76. M.D. Gasda, G.A. Eisman, and D. Gall, "Pore formation by in situ etching of nanorod PEM fuel cell electrodes," J. Electrochem. Soc. 156, B113 (2010). pdf doi
2009
75. S. Mukherjee and D. Gall, "Anomalous scaling during glancing angle deposition," Appl. Phys. Lett 95, 173106 (2009). pdf doi
74. G. Dehm, H.P. Worgotter, S. Cazottes, J.M. Purswani, D. Gall, C. Mitterer, and D. Kiener, "Can micro-compression testing provide stress-strain data for thin films? A comparative study using Cu, VN, TiN and W coatings," Thin Solid Films 518, 1517 (2009). doi
73. J. S. Chawla and D. Gall, "Specular electron scattering at single-crystal Cu(001) surfaces," Appl. Phys. Lett 94, 252101 (2009). pdf doi
72. Youqi Ke, Ferdows Zahid, V. Timoshevskii, Ke Xia, D. Gall, and Hong Guo, "Resistivity of thin Cu films with surface roughness," Phys. Rev. B 79, 155406 (2009). pdf doi
71. S. Mukherjee, C. M. Zhou and D. Gall, "Temperature-induced chaos during nanorod growth by physical vapor deposition," J. Appl. Phys. 105 (2009). pdf doi
70. M.D. Gasda, R. Teki, T.-M. Lu, N. Koratkar, G.A. Eisman, and D. Gall, "Sputter-deposited Pt PEM fuel cell electrodes: particles vs. layers," J. Electrochem. Soc. 156, B614 (2009). pdf doi
2008
69. C. M. Zhou, H.F. Li, and D. Gall, "Multi-component nanostructure design by atomic shadowing," Thin Solid Films 517, 1214 (2008). doi
68. C.P. Mulligan, T.A. Blanchet, and D. Gall, "CrN-Ag nanocomposite coatings: Effect of growth temperature on the microstructure," Surf. Coat. Technol. 203, 584 (2008). doi
67. J. M. Purswani and D. Gall, "Surface Morphological Evolution during Annealing of Epitaxial Cu(001) Layers," J. Appl. Phys. 104, 044305 (2008). pdf doi
66. V. Timoshevskii, Youqi Ke, Hong Guo, and D. Gall, "The influence of surface roughness on electrical conductance of thin Cu films: an ab initio study," J. Appl. Phys. 103, 113705 (2008). pdf doi
65. H.P. Worgotter, D. Kiener, J.M. Purswani, D. Gall, and G. Dehm, "Testing thin films by micro-compression: Benefits and limits," BHM 153, 257 (2008). doi
64. C.M. Zhou and D. Gall, "Two-Component Nanorod arrays by Glancing Angle Deposition," Small 4, 1351 (2008). doi
63. R. Nagar, B. R. Mehta, J. P. Singh, D. Jain, V. Ganesan, S. V. Kesapragada, and D. Gall, "Effect of swift heavy ion irradiation on the hardness of chromium nanorods," J. Vac. Sci. Technol. A 26, 887 (2008). pdf doi
62. S.V. Kesapragada, P.R. Sotherland, and D. Gall, "Ta nanotubes grown by glancing angle deposition," J. Vac. Sci. Technol. B 26, 678 (2008). pdf doi
61. C.M. Zhou and D. Gall, "Development of two-level porosity during glancing angle deposition," J. Appl. Phys. 103, 014307 (2008). pdf doi
2007
60. P. Victor, L. Ci, S. Sreekala, A. Kumar, S.V. Kesapragada, D. Gall, O. Nalamasu, and P.M. Ajayan, J. Suhr, "Effects of compressive strains on electrical conductivities of a macroscale carbon nanotube block," Appl. Phys. Lett. 91, 153116 (2007). pdf doi
59. J.M. Purswani and D. Gall, "Electron Scattering at Single Crystal Cu Surfaces," Thin Solid Films, 516, 465 (2007). doi
58. C.M. Zhou and D. Gall, "Surface patterning by nanosphere lithography for layer growth with ordered pores," Thin Solid Films 516, 433 (2007). doi
57. C.M. Zhou and D. Gall, "Competitive Growth of Ta Nanopillars during Glancing Angle Deposition: Effect of Surface Diffusion," J. Vac. Sci. Technol. A 25, 312 (2007). pdf doi
56. C.M. Zhou and D. Gall, "Growth Competition during Glancing Angle Deposition of Nanorod Honeycomb Arrays," Appl. Phys. Lett. 90, 093103 (2007). pdf doi
2006
55. S. V. Kesapragada, P. Victor, O. Nalamasu, and D. Gall, "Nanospring pressure sensors grown by glancing angle deposition," Nano Lett. 6, 854 (2006). doi
54. C.M. Zhou and D. Gall, "Branched Ta nanocolumns grown by glancing angle deposition," Appl. Phys. Lett. 88, 203117 (2006). pdf doi
53. S. V. Kesapragada and D. Gall, "Two-component nanopillar arrays grown by glancing angle deposition," Thin Solid Films 494, 234 (2006). doi
52. J.R. Frederick, J. D'Arcy-Gall, D. Gall, "Growth of Epitaxial CrN on MgO(001): Role of Deposition Angle on Surface Morphological Evolution," Thin Solid Films, 494, 330 (2006). doi
51. K. Kutschej, C. Mitterer, C.P. Mulligan, and D. Gall, "High-Temperature Tribological Behavior of CrN-Ag Self-lubricating Coatings," Adv. Eng. Mat. 8, 1125 (2006). doi
50. J.M. Purswani, T. Spila, and D. Gall, "Growth of Epitaxial Cu on MgO(001) by magnetron sputter deposition," Thin Solid Films, 515, 1166 (2006). doi
49. C.M. Zhou and D. Gall, "The structure of Ta Nanopillars Grown by Glancing Angle Deposition," Thin Solid Films, 515, 1223 (2006). doi
48. S. V. Kesapragada and D. Gall, "Anisotropic Broadening of Cu Nanorods during Glancing Angle Deposition," Appl. Phys. Lett. 89, 203121 (2006). pdf doi
2005
47. C. W. Lim, C.-S. Shin, D. Gall, J. M. Zuo, I. Petrov, and J. E. Greene, "Growth of CoSi2 on Si(001) by reactive deposition epitaxy," J. Appl. Phys. 97, 044909 (2005). pdf doi
46. Marcel A. Wall, David G. Cahill, I. Petrov, D. Gall, J.E. Greene, "Nucleation kinetics versus nitrogen partial pressure during homoepitaxial growth of stoichiometric TiN(001): A scanning tunneling microscopy study," Surf. Sci. 581, L122 (2005). doi
45. J.R. Frederick and D. Gall, "Nanostaircases: An Atomic Shadowing Instability during Epitaxial CrN(001) Layer Growth," Appl. Phys. Lett. 87, 053107 (2005); also featured in: Virt. J. Nanoscale Sci. Tech. 12, 6 (2005). pdf doi
44. H.-S. Seo, T.-Y. Lee, I. Petrov, J. E. Greene, and D. Gall, "Epitaxial and polycrystalline HfNx (0.8 < x < 1.5) layers on MgO(001): Film growth and physical properties," J. Appl. Phys. 97, 083521 (2005). pdf doi
43. J.R. Frederick and D. Gall, "Surface morphological evolution of epitaxial CrN(001) layers," J. Appl. Phys. 98, 054906 (2005). pdf doi
42. C.P. Mulligan and D. Gall, "CrN-Ag Self-Lubricating Hard Coatings," Surf. Coat. Technol. 200, 1495 (2005). doi
41. Jian Wang, Hanchen Huang, S. V. Kesapragada, and Daniel Gall, "Growth of Y-Shaped Nanorods through Physical Vapor Deposition," Nano Lett. 5, 2505 (2005). doi
2004
40. C.-S. Shin, S. Rudenja. D. Gall, N. Hellgren, T.-Y. Lee, I. Petrov, and J. E. Greene, "Growth, surface morphology, and electrical resistivity of fully-strained substoichiometric epitaxial TiNx (0.67 < x < 1.0) layers on MgO(001)", J. Appl. Phys. 95, 356 (2004). pdf doi
39. H. A. Al-Brithen, A. R. Smith, and D. Gall, "Surface and bulk electronic structure of ScN(001) investigated by scanning tunneling microscopy/spectroscopy and optical absorption spectroscopy," Phys. Rev. B 70, 045303 (2004). pdf doi
38. H.-S. Seo, T.-Y. Lee, J. G. Wen, I. Petrov, J. E. Greene, and D. Gall, "Growth and physical properties of epitaxial HfN layers on MgO(001)," J. Appl. Phys. 96, 878 (2004). pdf doi
37. M.A. Wall, D.G. Cahill, I. Petrov, D. Gall, and J.E. Greene, "Nucleation kinetics during homoepitaxial growth of TiN(001) by reactive magnetron sputtering," Phys. Rev. B 70, 035413 (2004). pdf doi
2003
36. D. Gall, S. Kodambaka, M.A. Wall, I. Petrov, and J.E. Greene, "Pathways of atomistic processes on TiN(001) and TiN(111) surfaces during film growth: an ab initio study", J. Appl. Phys. 93, 9086 (2003). pdf doi
35. F. Tian, J. D'Arcy-Gall, T.-Y. Lee, M. Sardela, D. Gall, I. Petrov, and J.E. Greene, "Epitaxial Ti1-xWxN alloys grown on MgO(001) by ultrahigh vacuum reactive magnetron sputtering: Electronic properties and long-range cation ordering", J. Vac. Sci. Technol. A 21, 140 (2003). pdf doi
34. C.-S. Shin, D. Gall, N. Hellgren, J. Patscheider, I. Petrov, and J. E. Greene, "Vacancy hardening in single-crystal TiNx layers", J. Appl. Phys. 93, 6025 (2003). pdf doi
33. T.-Y. Lee, D. Gall, C.-S. Shin, N. Hellgren, I. Petrov, and J. E. Greene, "Growth and physical properties of epitaxial CeN layers on MgO(001)", J. Appl. Phys. 94, 921 (2003). pdf doi
2002
32. S. Kodambaka, V. Petrova, S.V. Khare, D. Gall, A. Rockett, I. Petrov, and J.E. Greene, "Size-Dependent Detachment-Limited Decay Kinetics of Two-Dimensional TiN Islands on TiN(111)", Phys. Rev. Lett. 89, 176102 (2002). pdf doi
31. C.-S. Shin, Y.-W. Kim, D. Gall, J. E. Greene, and I. Petrov, "Phase Composition and Microstructure of Polycrystalline and Epitaxial TaNx Layers Grown on Oxidized Si(001) and MgO(001) by Reactive Magnetron Sputter Deposition", Thin Solid Films 402, 172 (2002). doi
30. D. Gall, C.-S. Shin, T. Spila, M. Oden, M.J.H. Senna, J.E. Greene, and I. Petrov, "Growth of Single-Crystal CrN on MgO(001): Effects of Low-energy Ion-irradiation on Surface Morphological Evolution and Physical Properties", J. Appl. Phys. 91, 3589 (2002). pdf doi
29. S. Y. Park, J. D'Arcy-Gall, D. Gall, Y.-W. Kim, P. Desjardins, and J. E. Greene, "C lattice site distributions in metastable Ge1-yCy alloys grown on Ge(001) by melecular-beam epitaxy", J. Appl. Phys. 91, 3644 (2002). pdf doi
28. D. Gall, C.-S. Shin, R.T. Haasch, I. Petrov, and J. E. Greene, "Band Gap in Epitaxial NaCl-structure CrN(001) Layers", J. Appl. Phys. 91, 5882 (2002). pdf doi
27. S. Y. Park, J. D'Arcy-Gall, D. Gall, J.A.N.T. Soares, Y.-W. Kim, P. Desjardins, and J. E. Greene, "Carbon incorporation pathways and lattice sites in Si1-yCy alloys grown on Si(001) by molecular-beam epitaxy", J. Appl. Phys. 91, 5716 (2002). pdf doi
26. H.A.H. AL-Brithen, E.M. Trifan, D.C. Ingram, A.R. Smith, D. Gall, "Phase Stability, nitrogen vacancies, growth mode, and surface structure of ScN(001) under Sc-rich conditions", J. Crystal Growth 242, 345 (2002). doi
25. C.-S. Shin, D. Gall, Y.-W. Kim, N. Hellgren, I. Petrov, and J. E. Greene, "Development of Preferred Orientation in Polycrystalline NaCl-structure d-TaN Layers Grown by Reactive Magnetron Sputtering: Role of Low-Energy Ion/Surface Interactions", J. Appl. Phys. 92, 5084 (2002). pdf doi
24. C.-S. Shin, Y.-W. Kim, N. Hellgren, D. Gall, I. Petrov, and J. E. Greene, "Epitaxial Growth of Metastable delta-TaN layers on MgO(001) using low-energy, high-flux ion irradiation during ultrahigh vacuum reactive magnetron sputtering, J. Vac. Sci. Technol. A 20, 2007 (2002). pdf doi
2001
23. D. Gall, M. Stoehr, and J. E. Greene, "Vibrational Modes in Epitaxial Sc1-xTixN(001) Layers: An Ab-initio Calculation and Raman Spectroscopy Study" Phys. Rev. B. 64, 174302 (2001). pdf doi
22. D. Gall, I. Petrov, and J. E. Greene, "Epitaxial Sc1-xTixN(001): Optical and Electronic Transport Properties," J. Appl. Phys. 89, 401 (2001). pdf doi
21. D. Gall, M. Stadele, K. Jarrendahl, I. Petrov, P. Desjardins, R.T. Haasch, T.-Y. Lee, and J. E. Greene, "Electronic Structure of ScN Determined using Optical Spectroscopy, Photoemission, and ab initio Calculations," Phys. Rev. B. 63, 125119 (2001). pdf doi
20. A. R. Smith, H.A.H. Al-Brithen, D.C. Ingram, and D. Gall, "Molecular Beam Epitaxy Control of the Structural, Optical, and Electronic Properties of ScN(001)," J. Appl. Phys. 90, 1809 (2001). pdf doi
19. J. D'Arcy-Gall, D. Gall, I. Petrov, P. Desjardins, J. E. Greene, "Quantitative C Lattice Site Distributions in Epitaxial Ge1-yCy/Ge(001) layers," J. Appl. Phys., 90, 3910 (2001). pdf doi
18. C.-S. Shin, D. Gall, Y.-W. Kim, P. Desjardins, I. Petrov, J. E. Greene, M. Oden, and L. Hultman, "Epitaxial NaCl-Structure d-TaNx(001): Electronic Transport Properties, Elastic Modulus, and Hardness vs N/Ta Ratio," J. Appl. Phys. 90, 2879 (2001). pdf doi
2000
17. N. Finnegan, R. T. Haasch, D. Gall, S. Kodambaka, J. E. Greene, and I. Petrov, "A Comparison of Auger Electron Spectra from Stoichiometric Epitaxial TiN(001) after (1) UHV Cleaving and (2) Ar+ Sputter Etching", Surf. Sci. Spectra 7, 93 (2000). pdf doi
16. D. Gall, J. D'Arcy-Gall, and J. E. Greene, "C Incorporation in Ge: An Ab Initio Study", Phys. Rev. B. 62, 7723 (2000). pdf doi
15. D. Gall, R. T. Haasch, N. Finnegan, T.-Y. Lee, C.-S. Shin, E. Sammann, J. E. Greene, and I. Petrov, "In-situ X-ray Photoelectron, Ultraviolet Photoelectron, and Auger Electron Spectroscopy from First-Row Transition-Metal Nitrides: ScN, TiN, VN, and CrN", Surf. Sci. Spectra 7, 167 (2000). pdf doi
14. J. D'Arcy-Gall, D. Gall, P. Desjardins, I. Petrov, and J. E. Greene, "Role of Fast Sputtered Particles During Sputter Deposition: Growth of Epitaxial Ge0.99C0.01/Ge(001)", Phys. Rev. B. 62, 11203 (2000). pdf doi
13. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial ScN(001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of as Deposited Layers", Surf. Sci. Spectra 7, 169 (2000). pdf doi
12. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial ScN(001) Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers", Surf. Sci. Spectra 7, 178 (2000). pdf doi
11. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial TiN(001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of as Deposited Layers", Surf. Sci. Spectra 7, 193 (2000). pdf doi
10. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial TiN(001) Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers", Surf. Sci. Spectra 7, 204 (2000). pdf doi
9. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial VN(001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of as Deposited Layers", Surf. Sci. Spectra 7, 221 (2000). pdf doi
8. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial VN(001) Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers", Surf. Sci. Spectra 7, 233 (2000). pdf doi
7. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial CrN(001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of as Deposited Layers", Surf. Sci. Spectra 7, 250 (2000). pdf doi
6. R. T. Haasch, T.-Y. Lee, D. Gall, J.E. Greene, and I. Petrov, "Epitaxial CrN(001) Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers", Surf. Sci. Spectra 7, 262 (2000). pdf doi
1999
5. C.-S. Shin, D. Gall, P. Desjardins, A. Vailionis, H. Kim, I. Petrov, and J. E. Greene, "Growth and Physical Properties of Epitaxial Metastable Cubic TaN(001)," Appl. Phys. Lett. 75, 3808 (1999). pdf doi
4. D. Gall, I. Petrov, P. Desjardins, and J. E. Greene, "Microstructural Evolution and Poisson Ratio of Epitaxial ScN Grown on TiN(001)/MgO(001) by Ultra-High Vacuum Reactive Magnetron Sputter Deposition," J. Appl. Phys. 86, 5524 (1999). pdf doi
1998
3. D. Gall, I. Petrov, N. Hellgren, L. Hultman, J.-E. Sundgren, and J. E. Greene, "Growth of Poly- and Single-Crystal ScN on MgO(001): Role of Low-Energy N2+ Irradiation in Determining Texture, Microstructure Evolution, and Mechanical Properties," J. Appl. Phys. 84, 6034 (1998). pdf doi
2. D. Gall, I. Petrov, L. D. Madsen, J.-E. Sundgren, and J. E. Greene, "Microstructure and Electronic Properties of the Refractory Semiconductor ScN Grown on MgO(001) by Ultra-High Vacuum Reactive Magnetron Sputter Deposition," J. Vac. Sci. Tech. A 16, 2411 (1998). pdf doi
1996
1. D. Gall, R. Gampp, H. P. Lang, and P. Oelhafen, "Pulsed Plasma Deposition of Chromium Oxide/Chromium-Cermet Coatings," J. Vac. Sci. Tech. A 14, 374 (1996). pdf doi
Proceeding Papers
9. D. Gall, "Interconnects: New Materials for High Conductivity," 2023 IEEE Semiconductor Interface Specialists Conference, San Diego, CA, 2023. pdf
8. D. Gall, Atharv Jog, Tianji Zhou, "Narrow interconnects: The most conductive metals," 2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2020, pp. 32.3.1-32.3.4. pdf doi
7. D. Gall, "The Resistivity Bottleneck: The Search for New Interconnect Metals," 2020 IEEE VLSI Technology, Systems, and Applications, Hsinchu, Taiwan, 2020. pdf doi
6. D. Gall, A. Jog, E. Milosevic, "Narrow interconnects: The search for new metals," 2019 IEEE Semiconductor Interface Specialists Conference, San Diego, CA, 2019. pdf
5. Erik Milosevic, Sit Kerdsongpanya, Daniel Gall, "The Resistivity Size Effect in Epitaxial Ru(0001) and Co(0001) Layers," 2018 IEEE Nanotechnology Symposium (ANTS), Albany, NY, 2018, pp. 1-5. pdf doi
4. Baiwei Wang and Daniel Gall, "A new semiconductor: Ti0.5Mg0.5N(001)," 2018 IEEE Nanotechnology Symposium (ANTS), Albany, NY, 2018, pp. 1-5. pdf doi
3. E. Milosevic, V. Kamineni, X. Zhang, H. Dixit, H. Huang, R. Southwick, C. Janicki, N. Lanzillo, D. Gall, M. V. Raymond, "Validity and Application of the TCR Method to MOL Contacts," 2018 IEEE International Interconnect Technology Conference (IITC), Santa Clara, CA, 2018, pp. 36-38. pdf doi
2. Daniel Gall, "Metals for Low-Resistivity Interconnects," 2018 IEEE International Interconnect Technology Conference (IITC), Santa Clara, CA, 2018, pp. 157-159. pdf doi
1. Daniel Gall, "Sculptured Thin Films: Nanorods, Nanopipes, Nanosmiles," Proceedings of SPIE - The International Society for Optical Engineering 81040V, San Diego, CA, 2011. pdf doi
Book Chapters
1. D. Gall, "Nanopipes in Transition Metal Nitrides," in Encyclopedia of Nanoscience and Technology, edited by N.S. Nalwa (American Scientific Publishers, Los Angeles, 2004), Vol. 7, p.219-227.
2. D. Gall, "Nanostructured Transition-Metal Nitride Layers", in Engineering Thin Films and Nanostructures with Ion Beams, edited by Emile J. Knystautas, Series Optical Engineering, Vol. 95 (CRC Press, Boca Raton FL, 2005).
3. D. Gall, "Materials Processing: Vapor deposition techniques", in Encyclopedia of Condensed Matter Physics, edited by Franco Bassani, Jerry Liedl, and Peter Wyder (Academic Press/Elsevier, Oxford, UK, 2005).
Patents
1. "Method for forming an epitaxial cobalt silicide layer on MOS devices", US Patent 6,797,598, inventors: C.W. Lim, C.-S. Shin, D. Gall, I. Petrov, and J.E. Greene, issued September 28, 2004.
2. "Pore formation by in situ etching of nanorod PEM fuel cell electrodes," US Patent 8,980,502, inventors: M.D. Gasda, G.A. Eisman, and D. Gall, issued March 17, 2015.